Fishing – trapping – and vermin destroying
Patent
1993-09-09
1995-05-30
Chadhuri, Olik
Fishing, trapping, and vermin destroying
437 71, 437127, H01L 3300, H01L 21465
Patent
active
054200490
ABSTRACT:
This invention describes a method of controlling light emission from porous silicon and porous silicon devices using ion implantation. The emitted light intensity can be either selectively increased or decreased by suitable processing of the silicon prior to the fabrication of the porous layer. Amorphizing the silicon prior to the fabrication of the porous layer quenches the light emission. Ion implantation with doses below the amorphization level enhances the intensity of the emitted light of the subsequently fabricated porous layer.
REFERENCES:
patent: 4532700 (1985-08-01), Kinney et al.
patent: 4810667 (1989-03-01), Zorinsky et al.
patent: 5110755 (1992-05-01), Chen et al.
patent: 5285078 (1994-02-01), Mimura et al.
Sze, S. M., Physics of Semiconductor Devices (2nd ed.), Wiley, New York.
Cullis, A. G. et al, Nature, 353, 1991, 335 Date unknown.
Fathauer, R. W. et al, Appl. Phys. Lett., 60, 1992, 995.
Sarathy, J. et al, Appl. Phys. Lett., 60, 1992, 1532.
Dubbelday, W. B. et al., Appl. Phys. Lett., 62, 1993, 1694.
Hou, X. Y. et al, Appl. Phys. Lett., 62, 1993, 1097.
Koshida, N. et al, Appl. Phys. Lett., 60, 1992, 347.
Steiner, P. et al, Mat. Res. Soc. Symp. Proc., 283, 1993, 343.
Maruska, H. P. et al, Appl. Phys. Lett., 61, 1992, 1338.
Barbour, J. C. et al, Appl. Phys. Lett., 59, 1991, 2088.
Morehead, F. F. et al, "A Model for the Formation of Amorphous Si by Ion bardment" Date unknown.
Canham, L. T., "Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers" Date unknown.
Shih, S. et al, "Control of Porous Si Photoluminescence Through Dry Oxidation".
Parsons, J. R., "Conversion of Crystalline Germanium to Amorphous Germanium by Ion Bombardment" Date unknown.
Ziegler, J. F. et al, "The Stopping Range of Ions in Matter", Pergamon Press, New York, 1985.
Dubbelday Wadad B.
Russell Stephen D.
Shimabukuro Randy L.
Szaflarski Diane M.
Chadhuri Olik
Fendelman Harvey
Keough Thomas Glenn
Mulpuri S.
The United States of America as represented by the Secretary of
LandOfFree
Method of controlling photoemission from porous silicon using io does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of controlling photoemission from porous silicon using io, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of controlling photoemission from porous silicon using io will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-361170