Method of controlling multi-species epitaxial deposition

Details Method of controlling multi-species epitaxial deposition Method of controlling multi-species epitaxial deposition

1997-02-27

1999-08-10

Evans, F. L.

Optics: measuring and testing

With plural diverse test or art

356311, 117 86, 117202, G01N 2131

Patent

active

059367164

ABSTRACT:
An integrated dual beam multi-channel optical-based flux monitor and method of monitoring atomic absorption of a plurality of atomic species during epitaxial deposition. Light from multiple sources is simultaneously passed through a region of deposition of material such that atomic absorption takes place. The light that passed through the region is then compared to light in a reference arm that did not pass through a region of atomic absorption. From this comparison the deposition of an epitaxial layer can be carefully monitored and controlled.

REFERENCES:
patent: 3654109 (1972-04-01), Hohl et al.
patent: 3865625 (1975-02-01), Yi Cho et al.
patent: 4300833 (1981-11-01), Harnly et al.
patent: 4815848 (1989-03-01), Hadeishi
patent: 4822168 (1989-04-01), Nogami et al.
patent: 4945254 (1990-07-01), Robbins
patent: 5038038 (1991-08-01), Weniger et al.
patent: 5066124 (1991-11-01), Wulf
patent: 5171399 (1992-12-01), Brennan et al.
patent: 5254207 (1993-10-01), Nishizawa et al.
patent: 5364492 (1994-11-01), Eckstein et al.
patent: 5399521 (1995-03-01), Celii et al.
patent: 5400739 (1995-03-01), Kao et al.
T.Y. Kometani and W. Wiegmann, "Measurements of Ga and Al in a Molecular-beam Epitaxy Chamber by Atomic Absorption Spectrometry (AAS)," J. Vac. Sci. Technol., vol. 12, No. 4, Jul./Aug. 1995, 933-936.
M.E. Klausmeier-Brown, J.E. Eckstein, I. Bozovic, and G.F. Virshup, "Accurate Measurement of Atomic Beam Flux by Pseudo-double-beam Atomic Absorption Spectroscopy for Growth of Thin-film Oxide Superconductors," Appl. Phys. Lett., vol. 60, No. 5, Feb. 3, 1992, 657-659.
S.A. Chalmers and K.P. Killeen, "Real-time Control of Molecular Beam Epitaxy by Optical-based Flux Monitoring,"Appl. Phys. Lett., vol. 63, No. 23, Dec. 6, 1993, 3131-3133.
S.A. Chalmers, K.P. Killeen and E.D. Jones, "Accurate Multiple-quantum-well Growth Using Real-time Optical Flux Monitoring," Appl. Phys. Lett., vol. 65, No. 1, Jul. 4, 1994, 4-6.
S.J. Benerofe, C.H. Ahn, M.M. Wang, K.E. Kihlstrom, K.B. Do, S.B. Arnason, M.M. Fejer, T.H. Geballe, M.R. Beasley and R.H. Hammond, "Dual Beam Atomic Absorption Spectroscopy for Controlling Thin Film Deposition Rates," J. Vac. Sci. Technol. B, vol. 12, No. 2, Mar./Apr. 1994, 1217-1220.
C. Lu and Y. Guan, "Improved Method of Nonintrusive Deposition Rate Monitoring by Atomic Absorption Spectroscopy for Physical Vapor Deposition Processes," J. Vac. Sci. Technol. A, vol. 13, No. 3, May/Jun. 1995, 1797-1801.
Brochure, "ATOMICAS A New Breakthrough in Thin Film Deposition Rate Monitoring Technology," Intelligent Sensor Technology, Inc., Mountain View, CA, Oct. 1994, 4 pages.
Weizhi Wang, R. H. Hammond, M. M. Fejer, C. H. Ahn and M.R. Beasely; M.D. Levenson and M. L. Bortz, "Diode-Laser-Based Atomic Absorption Monitor Using Frequency-Modulation Spectroscopy for Physical Vapor Deposition Process Control," App. Phys. Lett., vol. 67, No. 10, Sep. 4, 1995, pp. 1375-1377.
Weizhi Wang, M. M. Fejer, R. H. Hammond, M. R. Beasley, and C. H. Ahn; M. L. Bortz and T. Day, "Atomic Absorption Monitor for Deposition Process Control of Aluminum at 394 nm Using Frequency-Doubled Diode Laser," App. Phys. Lett., vol. 68, No. 5, Feb. 5, 1996, pp. 729-731.
R. Fischer, J. Klem, T. J. Drummond, R. E. Thorne, W. Kopp, H. Morkoc and A. Y. Cho, "Incorporation Rates of Gallium and Aluminum on GaAs During Molecular Beam Epitaxy at High Substrate Temperatures," J. Appl. Phys., vol. 54, No. 5, pp. 2508-2510, May 1983.
F. G. Celii, Y.-C. Kao, A. J. Katz, and T. S. Moise, "Real-time Monitoring of Resonant-tunneling Diode Growth Using Spectroscopy Ellipsometry," J. Vac. Sci. Technol. A, vol. 13, No. 3, pp. 733-739, May/Jun. 1995.
Jan P.A. van der Wagt and J. S. Harris, Jr., Reflection High-energy Electron Diffraction Intensity Oscillations During Molecular-Beam Epitaxy on Rotating Substrates, J. Vac. Sci. Technol. B, vol. 12, No. 2, pp. 1236-1238, Mar./Apr. 1993.
Alan Fried, James R. Drummond, Bruce Henry and Jack Fox, "Versatile Integrated Turnable Diode Laser System for High Precision: Application for ambient measurements of OCS", Applied Optics, vol. 30, No. 15, May 20, 1991 (see entire document).
W. E. Ahearn, "Optical Bridge for an Atomic Absorption Rate Monitor and Control System", IBM Technical Bulletin, vol. 14, No. 1, Jun. 1971 (see entire document).

Affiliated with

Also associated with

Rating

Method of controlling multi-species epitaxial deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of controlling multi-species epitaxial deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of controlling multi-species epitaxial deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1125400