Method of controlling metallic layer etching process and...

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Reexamination Certificate

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C438S710000

Reexamination Certificate

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07112795

ABSTRACT:
In a method of controlling a metallic layer etching process for fabricating a semiconductor device or a liquid crystal display device, the composition of the etchant used in etching the metallic layer is first analyzed with the NIR spectrometer. The state of the etchant is then determined by comparing the analyzed composition with the reference composition. In case the life span of the etchant comes to an end, the etchant is replaced with a new etchant. By contrast, in case the life span of the etchant is left over, the etchant is delivered to the next metallic layer etching process. This analysis technique may be applied to the etchant regenerating process in a similar way.

REFERENCES:
patent: 4633804 (1987-01-01), Arii
patent: 4872944 (1989-10-01), Rufin et al.
patent: 5282925 (1994-02-01), Jeng et al.
patent: 5288367 (1994-02-01), Angell et al.
patent: 5862060 (1999-01-01), Murray, Jr.
patent: 6519031 (2003-02-01), Gilton et al.
patent: 6707038 (2004-03-01), Ellson et al.
patent: 6734088 (2004-05-01), Purdy et al.
patent: 6743733 (2004-06-01), Kitsunai et al.
patent: 6749715 (2004-06-01), Gilton et al.
patent: 6942811 (2005-09-01), Patel et al.
patent: 2002/0121502 (2002-09-01), Patel et al.
patent: 2002/0195423 (2002-12-01), Patel et al.
patent: 2004/0040658 (2004-03-01), Usui et al.
patent: 2005/0082482 (2005-04-01), Ludviksson
patent: 63-38268 (1988-02-01), None
patent: 09-191007 (1997-07-01), None
patent: 9-235926 (1997-09-01), None
patent: 10335309 (1998-12-01), None
patent: 2000-8553 (2000-02-01), None

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