Method of controlling metal thin film formation conditions

Details Method of controlling metal thin film formation conditions Method of controlling metal thin film formation conditions

1991-02-13

1992-12-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437197, 437247, 427 8, 427 10, 73766, H01L 2166, G01R 3126

Patent

active

051751151

ABSTRACT:
Measurement of temperature - internal stress characteristics of an Al thin film formed on an Si substrate is performed. The amount of an impurity or impurities mixed in the thin f ilm can be obtained in accordance with the measured characteristics. A migration start temperature of Al atoms in the thin film in the characteristics obtained when the temperature is increased is fed back as information to the thin film formation step, thereby controlling an impurity amount in an atmosphere for forming the thin film.

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patent: 4975389 (1990-12-01), Ryan et al.
I. Ahmad et al., "Application of Protective CVD Coatings . . . ", Thin Solid Films, vol. 45 (1977) p. 275.
H. Oikawa et al., "Physical Properties of Vacuum Dep. MO Films", Oyo Buturi, vol. 47, No. 3, pp. 192-198, Mar. 1978.
J. Chen et al., "Temperature Effects on Internal Stress in Mo Thin Films . . . " Thin Solid Films, vol. 104, No. 1-2, Jun. 1983, pp. 251-255.
A. K. Sinha et al., "The Temperature Dependence of Stresses In Sl Films on Oxidized Si Substrates", Thin Solid Films, vol. 48, No. 1, pp. 117-126 (Jan. 1978).
H. Oikawa et al., "Effect of Heat Treatment After Deposition on Internal Stress on Mo Films on SiO.sub.2 /Si Substrates," J. Vac. Sci. and Tech., vol. 14, No. 5, Sep. 1977, pp. 1153-1156.

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