Method of controlling lifetime of minority carriers by electron

Details Method of controlling lifetime of minority carriers by electron Method of controlling lifetime of minority carriers by electron

1984-09-07

1986-04-29

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 148DIG23, 148DIG46, 357 38, 357 91, H01L 21265

Patent

active

045854890

ABSTRACT:
A semiconductor device and a method of manufacturing the same are disclosed wherein a semi-insulating film having a high trap density is formed on a semiconductor substrate so as to prevent charges from remaining in the semi-insulating film and to prevent a change in carrier density at the substrate surface upon irradiation thereof with radiation. The lifetime of minority carriers can be easily controlled without decreasing the junction breakdown voltages.

REFERENCES:
patent: 4210464 (1980-07-01), Tanaka et al.
patent: 4230791 (1980-10-01), Chu et al.
patent: 4240844 (1980-12-01), Felice
patent: 4318750 (1982-03-01), Rai-Choudhury et al.
patent: 4328610 (1982-05-01), Thompson et al.
patent: 4398343 (1983-08-01), Yamazaki
patent: 4415372 (1983-11-01), Koshino et al.
patent: 4469527 (1984-09-01), Sugano et al.
patent: 4479829 (1984-10-01), Kniepkamp
IEEE Transactions on Electron Devices, vol. ED-29, No. 5, May 1982, pp. 805-811, B. Jayant Baliga, "Electron Irradiation of Field-Controlled Thyristors".

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