Method of controlling heat treatment apparatus for substrate

Details Method of controlling heat treatment apparatus for substrate Method of controlling heat treatment apparatus for substrate

1989-02-08

1990-05-08

Walberg, Teresa J.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219411, 219494, F27B 514, H05B 102

Patent

active

049240730

ABSTRACT:
A semiconductor wafer (1) is thermally treated in a prescribed heating cycle while it is introduced into a furnace casing (4) of a furnace (4) and discharged therefrom. A temperature of a monitor chip (11) is measured by a radiation thermometer (16) immediately before introduction of the semiconductor wafer and memorized as an idling temperature. Then, while the furnace is heated up in order to make a measured temperature of the monitor chip agree with the idling temperature without the semiconductor wafer introduced, a temperature of the furnace casing is measured by a radiation thermometer (8) and memorized as a warm-up temperature. The furnace is controlled on the basis of the warm-up temperature or the idling temperature prior to sequential heat treatment of a number of semiconductor wafers.

REFERENCES:
patent: 4678432 (1987-07-01), Teraoka
patent: 4820907 (1989-04-01), Terauchi

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