Method of controlling gate oxide thickness in the fabrication of

Details Method of controlling gate oxide thickness in the fabrication of Method of controlling gate oxide thickness in the fabrication of

1993-06-15

1994-07-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 28, 437 29, 437 25, 437 42, 148DIG118, 148DIG163, H01L 21265

Patent

active

053309200

ABSTRACT:
A method of controlling gate oxide thickness in the fabrication of semiconductor devices wherein a sacrificial gate oxide layer is formed on a semiconductor substrate surface. Nitrogens ions are implanted into select locations of the substrate through the sacrificial gate oxide layer, and the substrate and the gate oxide layer are then thermally annealed. The sacrificial gate oxide layer is then removed and a gate oxide layer is then formed on the substrate layer wherein the portion of the gate oxide layer formed on the nitrogen ion implanted portion of the substrate is thinner than the portion of the gate oxide layer formed on the non-nitrogen ion implanted portion.

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patent: 4356041 (1982-10-01), Kosa
patent: 4411929 (1983-10-01), Sato et al.
patent: 4945068 (1990-07-01), Sugaya

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