Method of controlling etching with a focused charged beam by det

Details Method of controlling etching with a focused charged beam by det Method of controlling etching with a focused charged beam by det

1990-03-29

1993-12-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 2504922, H01L 21263, H01L 2142

Patent

active

052739350

ABSTRACT:
Accurate etching control using focused ion beams can be achieved if the etching is performed in accordance with a detection signal obtained by detecting an electric current passing from a semiconductor device to ground or secondary electrons generated when the charged beams are spirally applied to a predetermined area during the charged-beam scanning operation. Therefore, the end point of the process can be accurately detected and uniform processing results can be obtained. As a result, precise etching control can be performed and a reliable semiconductor device can be manufactured.

REFERENCES:
patent: 4487635 (1984-12-01), Kugimiya et al.
patent: 4609809 (1986-09-01), Yamaguchi et al.
patent: 4634871 (1987-01-01), Knauer
patent: 4639301 (1987-01-01), Doherty et al.
patent: 4851097 (1989-07-01), Hattori et al.
patent: 4874947 (1989-10-01), Ward et al.
patent: 4933565 (1990-06-01), Yamaguchi et al.

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