Method of controlling embedded material/gate proximity

Details Method of controlling embedded material/gate proximity Method of controlling embedded material/gate proximity

2008-05-12

2010-11-23

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

C438S004000, C438S800000

Reexamination Certificate

active

07838308

ABSTRACT:
A method that includes forming a gate of a semiconductor device on a substrate and forming a recess for an embedded silicon-straining material in source and drain regions for the gate. In this method, a proximity value, which is defined as a distance between the gate and a closest edge of the recess, is controlled by controlling formation of an oxide layer provided beneath the gate. The method can also include feedforward control of process steps in the formation of the recess based upon values measured during the formation of the recess. The method can also apply feedback control to adjust a subsequent recess formation process performed on a subsequent semiconductor device based on the comparison between a measured proximity value and a target proximity value to decrease a difference between a proximity value of the subsequent semiconductor device and the target proximity value.

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