Method of controlling dopant incorporation in high resistivity I

Details Method of controlling dopant incorporation in high resistivity I Method of controlling dopant incorporation in high resistivity I

1989-12-15

1991-03-12

Chaudhuri, Olik

Electrical connectors

With circuit conductors and safety grounding provision

Uninterrupted support rail or contact, or for interfitting...

148DIG23, 148DIG41, 148DIG65, 148DIG119, 156613, 437 87, 437945, 437971, H01L 2120

Patent

active

049993151

ABSTRACT:
High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.

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