Method of controlling dopant diffusion and dopant electrical act

Details Method of controlling dopant diffusion and dopant electrical act Method of controlling dopant diffusion and dopant electrical act

1985-06-11

1987-08-25

Munson, Gene M.

Fishing, trapping, and vermin destroying

357 7, 357 90, 357 91, 437 25, H01L 29167, H01L 2900, H01L 2104

Patent

active

046896678

ABSTRACT:
A method for preparing semiconductor components having a structure with sharply defined spatial distributions of dopant atoms with control over the degree of electrical activation of the dopant atoms. Control of spatial distribution and the degree of electrical activation of dopant atoms is achieved by implantation of dopant atoms along with rare gas atoms and another type of dopant atom within substantially the same preselected depth boundaries of a silicon or germanium substrate.

REFERENCES:
patent: 3796929 (1974-03-01), Nicholas et al.
patent: 4053925 (1977-10-01), Burr et al.
patent: 4151011 (1979-04-01), Mihashi et al.
patent: 4452644 (1984-06-01), Bruel et al.
W. K. Chu et al., "Interference of Arsenic Diffusion by Argon Implantation", Radiation Effects 49, 23 (1980).
S. Aronowitz, "Quantum-Chemical Modeling of Boron and Noble Gas _Dopants in Silicon", J. App. Phys. 54, 3930 (1983).
A. Milgram et al., "Effect of Argon Implantation on the Activation of Boron Implanted in Silicon", Appl. Phys. Lett. 42, 878 (1983).
V. D. Tkachev et al., "Noble Gas Atoms as Chemical Impurities in Silicon", Phys. Stat. Sol. (a) 81, 313 (1984).
M. Delfino et al., "Epitaxial Regrowth of Silicon Implanted with Argon and Boron", Appl. Phys. Lett. 44, 594 (1984).

Affiliated with

Also associated with

Rating

Method of controlling dopant diffusion and dopant electrical act does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of controlling dopant diffusion and dopant electrical act, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of controlling dopant diffusion and dopant electrical act will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1926741