Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Patent
1997-04-11
1999-11-02
Niebling, John F.
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
438143, 438310, 438402, 148DIG24, 148DIG60, H01L 21322
Patent
active
059769564
ABSTRACT:
Dopant atoms have coefficients of diffusion that vary due to implant damage. Damaged regions are selected and created by implanting silicon atoms into a silicon substrate prior to formation of a gate electrode. The silicon atoms act as a getter for attracting selected dopants that are trapped in the silicon substrate. Dopants are implanted in the vicinity of the damaged regions and diffused by transient-enhanced diffusion (TED) into the damaged regions by thermal cycling to accumulate dopant atoms. Transient-enhanced diffusion improves the doping of a substrate by enhancing the diffusion of dopants at relatively low anneal temperatures. Dopant accumulation sets particular selected electrical properties without placing an excessive amount of dopant in regions adjacent to junctions for purposes including threshold control for a field device, threshold setting for a transistor, and prevention of device punchthrough.
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Dawson Robert
Fulford Jr. H. Jim
Gardner Mark I.
Hause Frederick N.
Michael Mark W.
Advanced Micro Devices , Inc.
Koestner Ken J.
Murphy John
Niebling John F.
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