Method of controlling a potential difference between a...

Details Method of controlling a potential difference between a... Method of controlling a potential difference between a...

2006-08-22

2006-08-22

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

C438S551000, C430S005000

Reexamination Certificate

active

07094612

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed, which comprises setting a stencil mask above a substrate to be processed in confronting to the substrate, the stencil mask having an opening, and irradiating the substrate with charged particles through the opening of the stencil mask, while adjusting a potential difference between the stencil mask and the substrate depending on a value of a current flowing between the substrate and the stencil mask.

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Office Action from the Taiwan Intellectual Property Office dated Mar. 3, 2005 in patent application No. 092135566, and English translation.
Notification for Filing Opinion from the Korean Intellectual Property Office, dated Jul. 19, 2005, in Patent Application No. 10-2003-96719 and English translation thereof.

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