Method of continuously forming a large area functional deposited

Details Method of continuously forming a large area functional deposited Method of continuously forming a large area functional deposited

1994-08-25

1995-03-14

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

Running length work

118719, 118723MW, 118725, 118729, 118730, C23C 1650, C23C 1648

Patent

active

053973950

ABSTRACT:
A method and apparatus for forming a large area functional deposited film by a microwave PCVD method by continuously moving an elongated member in its lengthwise direction, and forming a columnar film-forming chamber the side wall of which is an intermediate portion of the moving elongated member. A deposited film forming raw material gas is introduced into the film-forming space via a gas supply device. Microwave plasma in the film-forming space is generated by radiating microwave energy from a microwave applicator while continuously, at the same time as that of the introduction of the raw material gas, moving a movable sheet made of a dielectric material which is positioned in contact with a microwave introduction opening and the surface of the microwave introduction opening. A deposited film can then be formed on the surface of the elongated member which constitutes the side wall and which is being continuously moved, the side wall constituted by the elongated member being exposed to the microwave plasma.

REFERENCES:
patent: 3814983 (1974-06-01), Weissfloch et al.
patent: 4265932 (1981-05-01), Peters
patent: 4504518 (1985-03-01), Ovshinsky et al.
patent: 4517223 (1985-05-01), Ovshinsky et al.
patent: 4521717 (1985-06-01), Keiser
patent: 4729341 (1988-03-01), Fournier et al.
patent: 4785763 (1988-11-01), Saitoh
patent: 4909184 (1990-03-01), Fujiyama
patent: 4951602 (1990-08-01), Kanai
patent: 4995341 (1991-02-01), Matsuyama et al.
patent: 5038713 (1991-08-01), Kawakami et al.
patent: 5114770 (1992-05-01), Echizen etal.
M. Dahimene et al., "The performance of a microwave ion source immersed in a multicusp static magnetic field," J. Vac. Sci. Technol. B, vol. 4, No. 1 Jan./Feb. 1986, pp. 126-130.
T. Roppel et al., "Low temperature oxidation of silicon using a microwave plasma disk source," J. Vac. Sci. Technol. B, vol. 4, No. 1, Jan./Feb. 1986, pp. 295-298.

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