Method of contacting a silicide-based schottky diode

Details Method of contacting a silicide-based schottky diode Method of contacting a silicide-based schottky diode

1999-05-17

2000-09-19

Bowers, Charles

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

438570, 438571, 438582, H01L 2964, H01L 2956, H01L 2962

Patent

active

061211222

ABSTRACT:
A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of the Schottky diode and a contact to the silicide that is fully bordered by silicide with respect to an internal edge of the guard ring.

REFERENCES:
patent: 3906540 (1975-09-01), Hollins
patent: 4063964 (1977-12-01), Peressini et al.
patent: 4261095 (1981-04-01), Dreves et al.
patent: 4278985 (1981-07-01), Stobbs
patent: 4476157 (1984-10-01), Shinozaki
patent: 4481041 (1984-11-01), Muller
patent: 4513309 (1985-04-01), Cricchi
patent: 4742377 (1988-05-01), Einthoven
patent: 4795722 (1989-01-01), Welch et al.
patent: 4859616 (1989-08-01), Losehand et al.
patent: 4862244 (1989-08-01), Yamagishi
patent: 4874714 (1989-10-01), Eklund
patent: 4899199 (1990-02-01), Gould
patent: 5021840 (1991-06-01), Morris
patent: 5478764 (1995-12-01), Inoue
patent: 5539237 (1996-07-01), Todd et al.
patent: 5614755 (1997-03-01), Hutter et al.

Affiliated with

Also associated with

Rating

Method of contacting a silicide-based schottky diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of contacting a silicide-based schottky diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of contacting a silicide-based schottky diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072441