Method of contacting a semiconductor die with probes

Details Method of contacting a semiconductor die with probes Method of contacting a semiconductor die with probes

1993-02-01

1994-10-18

Nguyen, Vinh

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324 731, G01R 3102

Patent

active

053571924

ABSTRACT:
A method of forming a contact between a semiconductor die (10) and a probe (36, 37, 38, 41, 42). The semiconductor die (10) has an integrated circuit region (11) and a bonding pad region (12). A conductive plane (31, 32) couples a bonding pad (16, 17) on one side of the semiconductor die (10) with a bonding pad (16, 17) on an opposite side of the semiconductor die (10). A first probe (41, 42) is positioned a first vertical distance above the conductive plane (31, 32) and a second probe is positioned a second vertical distance above the bonding pad (16, 17) on the semiconductor die (10). The second vertical distance is greater than the first vertical distance. Contacting a portion of the conductive plane (31, 32) with the first probe (41, 42) followed by contacting the bonding pad (16, 17) on the semiconductor die (10)with the second probe (36, 37). The diameter of the first probe (41, 42) is greater than that of the second probe (36, 37).

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