Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1975-01-20
1976-04-06
Mehr, Milton S.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
H01J 900
Patent
active
039479331
ABSTRACT:
The center-to-center spacings of a photoresist pattern for an array of holes applied to a thin metal sheet are increased by uniformly stretching the thin metal sheet in all directions along the plane of the sheet. The uniform stretching is provided by securely clamping the periphery of the sheet and applying an annular force against the face of the sheet, within the periphery of the sheet and around the photoresist pattern. The technique used in the construction of ion thruster grid units wherein the outer or downstream grid is subjected to uniform stretching prior to convex molding. The technique provides alignment of the holes of grid pairs so as to direct the ion beamlets in a direction parallel to the axis of the grid unit and thereby provide optimization of the available thrust.
REFERENCES:
patent: 3296850 (1967-01-01), Fiore
patent: 3809945 (1974-05-01), Roeder
patent: 3864797 (1975-02-01), Banks
Manning John R.
Mehr Milton S.
Musial Norman T.
Shook G. E.
The United States of America as represented by the Administrator
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