Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1978-09-11
1981-09-15
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29576S, 29580, 29588, 357 51, 357 70, 357 76, H01L 21603, H01L 2516
Patent
active
042889120
ABSTRACT:
Wafers of silicon semiconductor material are stacked, bonded and severed to form a plurality of semiconductor diodes. One or more capacitor bodies are physically and electrically joined with these diodes, either by means of the capacitor bodies themselves or by means of an intermediate lead frame structure, in order to facilitate the handling and processing of the assembly as a unit.
REFERENCES:
patent: 2911572 (1959-11-01), Francis
patent: 3270399 (1966-09-01), Ohntrup
patent: 3423821 (1969-01-01), Nishimura
IBM Technical Disclosure Bulletin, "High-Density Single-Device Memory Cell", by Barson et al., vol. 16, No. 6, Nov. 1973, p. 1698.
Miller Larry L.
Vaughn Herchel A.
Wills Walter L.
Fosse John S.
Rutledge L. Dewayne
Saba W. G.
Varo Semiconductor, Inc.
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