Method of connecting wirings through connection hole

Fishing – trapping – and vermin destroying

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437195, 437947, 437981, 156644, H01L 21441, C23F 100

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active

053209796

ABSTRACT:
A method includes the steps of forming an insulating layer on a first conductive layer, forming a connection hole in the insulating layer, performing etching using an ion having a very low etching rate with respect to the first conductive layer and a high etching rate with respect to the insulating layer, thereby forming a taper on a side wall of the connection hole, and forming a second conductive layer on the first layer and the insulating layer. A typical example of an etching ion is an oxygen ion.

REFERENCES:
patent: 4624740 (1986-11-01), Abrams et al.
Chemical Abstracts 98(24):208315n; 103(10):80283c; (Dec. 1985) 101(20):181210r: 110(4):32424x; (Jun. 1988) 113(10):89050p (Aug. 1990).

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