Method of connecting base materials

Details Method of connecting base materials Method of connecting base materials

2008-07-22

2008-07-22

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

active

11019157

ABSTRACT:
The present invention is aimed at providing a method of connecting base materials capable of forming metal terminals having a uniform height and smooth surface with a low cost, and of realizing a low-damage mounting, in which a work is planarized while keeping the temperature of the insulating film, possibly elevated due to frictional heat generated during cutting using a cutting tool, lower than 80° C., and keeping the temperature range lower than 80° C. throughout the entire period of the cutting, the electrodes and electrodes are opposed and brought into contact at a temperature of 80° C. or above but lower than the curing temperature of the insulating film, the insulating film is liquefied and a space between the electrodes and electrodes is filled with an insulating resin composing the insulating film, and the insulating resin is cured at the curing temperature or above.

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