Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Patent
1983-10-13
1985-03-12
Downey, Mary F.
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
430296, 2504922, G03C 500
Patent
active
045045585
ABSTRACT:
For compensating scattering losses of electrons in photoresists (proximity effect) which influence electron beam lithography by altering the pattern geometry it is suggested to expose selected partial areas of a pattern to an additional irradiation dosage in a second exposure step. For that purpose, a specific mask with corresponding correction openings can be used which is applied with the same, or with a different electron beam intensity. In a particularly advantageous manner the correction of the proximity effect can be achieved when complementary masks are used; the correction openings for the partial areas of the one complementary mask are arranged in the other complementary mask. The proximity effect is then corrected without an additional exposure step. For measuring the proximity effect a photo-optical process is suggested where line patterns with decreasing ridge width in the photoresist are defined through electron beam projection, and where the developing process of the photoresist is discontinued prematurely. The ridge edges which in the presence of the proximity effect are asymmetrical can be easily detected under the microscope.
REFERENCES:
patent: 3679497 (1972-07-01), Handy et al.
patent: 4169230 (1979-09-01), Bohlen et al.
patent: 4198569 (1980-04-01), Takayama
patent: 4234358 (1980-11-01), Celler et al.
patent: 4264711 (1981-04-01), Greeneich
Record of the 10th Symposium on Electron, Ion and Laser Beam Technology-Chang et al., "A High Resolution Electron-Beam System for Microcircuit Fabrication, 5-21-23, 1969, pp. 97-106.
Brault et al., J. Electro. Chem. Soc., "A Method for Rapidly Screening Polymers as Electron Beam Resist, May 1981, pp. 1158-1961.
Rosenfield et al., J. Vac. Sci. Technol. 19(4), Nov./Dec. 1981, pp. 1242-1247, "The Use of Bias in Electron Beam Lithography for Improved Profile Quality and Line Width Control.
J. of Electro. Chem. Soci. Extended Abstracts, vol. 80-1, Abstract 260, pp. 663-666, (1980), "Advanced EB Proximity Effect Correction for Fine-Pattern Device Fabrication" by N. Suciyama and K. Saitoh.
J. Vac. Sci. Techn., vol. 15, No. 3, 1978, pp. 382-391, "Proximity Effect Corrections in Electron Beam Lithography" by M. Parikh.
Bohlen Harald
Engelke Helmut
Greschner Johann
Nehmiz Peter
Coca T. Rao
Downey Mary F.
International Business Machines - Corporation
LandOfFree
Method of compensating the proximity effect in electron beam pro does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of compensating the proximity effect in electron beam pro, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of compensating the proximity effect in electron beam pro will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-708183