Method of compensating the proximity effect in electron beam pro

Details Method of compensating the proximity effect in electron beam pro Method of compensating the proximity effect in electron beam pro

1981-06-03

1984-01-17

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

430296, H01J 326

Patent

active

044265840

ABSTRACT:
For compensating scattering losses of electrons in photoresists (proximity effect) which influence electron beam lithography by altering the pattern geometry it is suggested to expose selected partial areas of a pattern to an additional irradiation dosage in a second exposure step. For that purpose, a specific mask with corresponding correction openings can be used which is applied with the same, or with a different electron beam intensity. In a particularly advantageous manner the correction of the proximity effect can be achieved when complementary masks are used; the correction openings for the partial areas of the one complementary mask are arranged in the other complementary mask. The proximity effect is then corrected without an additional exposure step. For measuring the proximity effect a photo-optical process is suggested where line patterns with decreasing ridge width in the photoresist are defined through electron beam projection, and where the developing process of the photoresist is discontinued prematurely. The ridge edges which in the presence of the proximity effect are asymmetrical can be easily detected under the microscope.

REFERENCES:
patent: 4169230 (1979-09-01), Bohlen et al.
patent: 4198569 (1980-04-01), Takayama
patent: 4234358 (1980-11-01), Celler et al.
patent: 4264711 (1981-04-01), Greeneich
M. Parikh, "Proximity Effect Corrections In Electron Beam Lithography", J. Vac. Sci. Techn. 15, 382-391 (1978).
N. Sugiyama et al. "Advanced EB Proximity Effect Correction For Fine-Pattern Device Fabrication".
J. Elec. Chem. Soc. Extended Abstracts 80-1, 663-666 (1980).

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