Method of compensating for etch rate non-uniformities by ion...

Details Method of compensating for etch rate non-uniformities by ion... Method of compensating for etch rate non-uniformities by ion...

2006-08-29

2006-08-29

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000

Reexamination Certificate

active

07098140

ABSTRACT:
Etch uniformity is improved in that a specified material layer to be etched is exposed to an ion beam so as to implant an ion species, wherein at least one implantation parameter is varied in conformity with local etch rates of the specified material layer. In this way, etch non-uniformities, induced by tool non-uniformities and recipe specific characteristics, may be significantly reduced.

REFERENCES:
patent: 3808068 (1974-04-01), Johnson et al.
patent: 4438556 (1984-03-01), Komatsu et al.
patent: 2002/0093071 (2002-07-01), Chheda et al.
patent: 2003/0097198 (2003-05-01), Sonderman et al.
patent: 0 148 448 (1985-07-01), None
patent: 03297137 (1991-12-01), None
patent: 04333236 (1992-11-01), None
patent: 2000021999 (2000-01-01), None
patent: 2000188396 (2000-07-01), None

Affiliated with

Also associated with

Rating

Method of compensating for etch rate non-uniformities by ion... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of compensating for etch rate non-uniformities by ion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of compensating for etch rate non-uniformities by ion... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3688394