Method of coating a nitride ceramic member

Coating processes – Coating by vapor – gas – or smoke – Metal coating

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4271262, 427255, 427214, 427307, 427309, C23C 1600

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048761192

ABSTRACT:
A nitride ceramic member is maintained at a vacuum of 1.times.10.sup.-4 Torr or less at a temperature of 1,000.degree. C. or more, and a metal vapor is brought into contact with the surface of the nitride ceramic member. A nitride is reacted with the metal in the surface portion of the ceramic member, and a metallized layer is formed on the surface of the member. If AlN is used as a nitride ceramic material, the AlN member is maintained at the vacuum at the high temperature and a Ti vapor is brought into contact wit the surface of the AlN member to form a TiN coating layer on the surface of the AlN member. A BN or graphite mask is formed on the surface of the nitride ceramic member and the above method is practiced to selectively form a metallized layer on the non-masked member surface. By selectively forming a metallized layer by using AlN, a highly thermal-conductivity substrate having a conductive layer formed on the AlN base can be prepared.

REFERENCES:
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patent: 4678678 (1987-07-01), Kamigaito et al.
patent: 4685607 (1987-08-01), Takeda et al.
Chemical abstracts, vol. 106, no. 10, Mar. 1987, p. 309, abstract No. 71895p, Columbus, Ohio, U.S.; & JP-A-61 209 979 (Toshiba Corp.) 9-18-1986.
Chemical Abstracts, vol. 100, No. 8, Feb. 1984, p. 268, abstract no. 55907q, Columbus, Ohio U.S.; & JP-A-58 176 189 (NGK Spark Plug Co., Ltd) 10-15-1983.
Chemical Abstracts, vol. 88, 1978, p. 311, abstract no. 157371m, Columbus, Ohio, U.S.; & JP-A-77 29 246 (Agency of Industrial Sciences and Technology) 8-01-1977.

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