Method of cleaning wafer substrates

Details Method of cleaning wafer substrates Method of cleaning wafer substrates

1997-06-13

1999-10-19

Powell, William

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 13, 156345, 216 67, 216 79, 438719, B44C 122, H01L 2100

Patent

active

059682795

ABSTRACT:
The silicon surface of a wafer is cleaned at room temperature in a separate pre-clean chamber prior to epitaxial deposition. Fluorine atoms generated, for example, from NF.sub.3 gas, enter the pre-clean chamber, contact the silicon surface, and etch away native oxide, contaminated silicon, and other damage incurred from prior wafer processes. The cleaned wafer is then transferred in an oxygen-free environment to a deposition chamber, for epitaxial deposition. By cleaning at reduced temperatures, autodoping, slip, and other stress-related problems are alleviated. By using a separate chamber for cleaning, system throughput is increased when compared to prior systems using conventional cleaning methods.

REFERENCES:
patent: 4985372 (1991-01-01), Narita
patent: 5228950 (1993-07-01), Webb et al.
patent: 5413670 (1995-05-01), Langen et al.

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