Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having a perfecting coating
Patent
1997-04-03
1999-02-16
Picardat, Kevin
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having a perfecting coating
439460, H01L 2144
Patent
active
058720464
ABSTRACT:
A process of cleaning debris (24) from a partially-sawn semiconductor wafer (10). The method of the present invention includes cleaning a partially fabricated wafer (12) that may have fabricated on it a micromechanical device (16) which can be easily damaged by particles (24) generated by the partial-saw process, such as oxide particles. The present invention includes cleaning the partially-sawn wafer with a solution including diluted hydrofluoric acid and an alkyl glycol. Clean-up using this solution accomplishes two goals. First, it removes debris including oxide particles on the wafer surface and in the kerfs (22), and second, reduces the depth of damage in the surface (26) of a CMOS layer (14) proximate the kerf (22) which has been determined to be a source of particles generated after a wafer cleanup process. A subsequent megasonic process is utilized to acoustically vibrate the wafer while bathed in deionized water to further remove any other particles. After the clean-up process of the present invention, the semiconductor wafer is completed by performing at least one more semiconductor process. An substantially improved yield is realized by utilizing the cleaning process of the present invention.
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Harada Takeshi
Kaeriyama Toshiyuki
Donaldson Richard L.
Picardat Kevin
Reed Julie L.
Texas Instruments Incorporated
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