Method of cleaning wafer after etching process

Details Method of cleaning wafer after etching process Method of cleaning wafer after etching process

2006-11-23

2009-12-08

Carrillo, Sharidan (Department: 1792)

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

C134S003000, C134S021000, C134S022100, C134S022170, C134S025400, C134S026000, C134S028000, C134S029000, C134S030000, C134S036000, C134S041000, C134S042000, C134S902000, C216S013000, C216S017000, C216S041000, C216S051000, C216S067000, C216S072000, C216S079000, C438S623000, C438S700000, C438S735000, C438S738000, C438S906000

Reexamination Certificate

active

07628866

ABSTRACT:
A method of cleaning a wafer after an etching process is provided. A substrate having an etching stop layer, a dielectric layer, a patterned metal hard mask sequentially formed thereon is provided. Using the patterned metal hard mask, an opening is defined in the dielectric layer. The opening exposes a portion of the etching stop layer. A dry etching process is performed in the environment of helium to remove the etching stop layer exposed by the opening. A dry cleaning process is performed on the wafer surface using a mixture of nitrogen and hydrogen as the reactive gases. A wet cleaning process is performed on the wafer surface using a cleaning solution containing a trace amount of hydrofluoric acid.

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