Method of cleaning surface of substrate and method of manufactur

Details Method of cleaning surface of substrate and method of manufactur Method of cleaning surface of substrate and method of manufactur

1999-05-24

2000-09-26

Bowers, Charles

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438477, 438759, 438770, 438974, 438906, 134 13, H01L 21322, H01L 21302, H01L 2131

Patent

active

061242101

ABSTRACT:
The present invention relates to a method of cleaning a surface of a substrate employed prior to film formation by using the CVD method which uses a reaction gas containing an ozone containing gas which contains ozone (O.sub.3) in oxygen (O.sub.2) and tetraethylorthosilicate (TEOS). The substrate surface cleaning method comprises the steps of oxidizing particles 13 by contacting a pre-process gas containing ozone 15 to a surface 12 of a substrate 11 on which the particles 13 are present, and removing the particles 13 by heating the substrate 11 to exceed a decomposition point of oxide 13a of the particles 13.

REFERENCES:
patent: 5674357 (1997-10-01), Sun et al.
patent: 5749975 (1998-05-01), Li et al.
patent: 5782986 (1998-07-01), Butterbaugh et al.
patent: 5994240 (1999-11-01), Thakur

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