Method of cleaning silicon nitride layer

Details Method of cleaning silicon nitride layer Method of cleaning silicon nitride layer

2005-12-29

2008-12-23

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S745000, C438S747000, C438S906000, C257SE21002

Reexamination Certificate

active

07468325

ABSTRACT:
A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and/or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.

REFERENCES:
patent: 7216656 (2007-05-01), Yamamoto
patent: 7235516 (2007-06-01), Morinaga et al.
patent: 7338905 (2008-03-01), Shirasu et al.

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