Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-04-11
2006-04-11
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C134S001200
Reexamination Certificate
active
07026246
ABSTRACT:
A method of forming a semiconductor device that includes cleaning a substrate after forming a tungsten pattern thereon, comprises forming a tungsten layer on a substrate, etching the tungsten layer to form a tungsten pattern, and performing a cleaning process on the substrate having the tungsten pattern using a cleaning solution of a water solution containing 0.1 to 0.4 wt % fluoric acid and 0.5 to 2 wt % hydrogen peroxide. By using the method of the present invention, metal polymers and oxidized slurry residue generated while forming the tungsten pattern may be completely removed without attacking the tungsten pattern.
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Coleman W. David
Lee & Morse P.C.
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