Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Patent
1992-07-30
1994-07-05
Breneman, R. Bruce
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
134 2, 134 3, 134 951, 156635, 156643, B08B 312, C03C 2506, C03C 1500, B44C 122
Patent
active
053264061
ABSTRACT:
A semiconductor wafer is placed in a reaction chamber and a cleaning gas is introduced into the reaction chamber. Then, the cleaning gas is excited by irradiation with light rays or heating to produce reactive radicals and a natural oxide film formed on the semiconductor wafer is first removed by the reactive radicals to expose a raw semiconductor wafer surface and then the exposed raw wafer surface is etched by the reactive radicals. Since the natural oxide film is first removed, the exposed raw surface of semiconductor wafer can be etched uniformly over the whole surface, and therefore the highly flat and perfectly crystalline surface can be obtained. It is preferable to introduce a chlorine fluoride series gas such as chlorine trifluoride gas in the cleaning gas. Then, the natural oxide film can be effectively removed by hydrogen fluorine radicals which are produced by irradiating the chloride fluoride series gas with ultraviolet rays.
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Kaneko Yoshio
Koda Munetaka
Murakami Takehiro
Shiraishi Tadayoshi
Breneman R. Bruce
Dunn Jr. Thomas G.
Kawasaki Steel Corporation
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