Method of cleaning semiconductor substrate

Details Method of cleaning semiconductor substrate Method of cleaning semiconductor substrate

2008-01-15

2008-01-15

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Processes

Using solid work treating agents

C134S002000, C134S003000, C134S007000, C134S030000, C134S031000, C134S042000, C438S691000, C438S692000, C438S693000

Reexamination Certificate

active

10421740

ABSTRACT:
A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O3) into the cleaning chamber. This process operates to cleanse the semiconductor substrate without corrosion or etching of the semiconductor substrate; even when the substrate has metal layer made of tungsten.

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