Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment
Patent
1993-04-30
1995-01-10
Dean, Richard O.
Cleaning and liquid contact with solids
Processes
Hollow work, internal surface treatment
134 2, 134 3, 134 221, 134 2212, 134 2218, 134 37, 134 42, 156643, 156646, B08B 700, B08B 900
Patent
active
053803701
ABSTRACT:
Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.
REFERENCES:
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4568410 (1986-02-01), Thornquist
patent: 5022961 (1991-01-01), Izumi et al.
patent: 5116784 (1992-05-01), Ushikawa
patent: 5254176 (1993-10-01), Ibuka et al.
Fujita Yoshiyuki
Imamura Yasuo
Lee Hideki
Mikata Yuuichi
Miyazaki Shinji
Dean Richard O.
El-Arini Zeinab
Tokyo Electron Limited
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