Method of cleaning processing chamber of semiconductor...

Details Method of cleaning processing chamber of semiconductor... Method of cleaning processing chamber of semiconductor...

2005-05-31

2005-05-31

Carrillo, Sharidan (Department: 1746)

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

C134S002000, C134S003000, C134S021000, C134S022100, C134S022170, C134S022180, C134S025400, C134S028000, C134S029000, C134S031000, C134S034000, C134S035000, C134S036000, C134S037000, C134S041000, C134S042000

Reexamination Certificate

active

06899767

ABSTRACT:
A method of cleaning the interior of a processing chamber first performs a halogenation treatment by supplying a treatment gas containing a halogenating gas into the processing chamber and heating a support member for a target substrate, thereby halogenating a metal element in a by-product film. A reduction treatment is then performed by supplying a treatment gas containing a reducing gas into the processing chamber, thereby reducing a halide of the metal element and liberating the metal element. An oxidation treatment is then performed by supplying a treatment gas containing an oxidizing gas into the processing chamber and heating the casing walls of the processing chamber, thereby passivating the liberated metal element by oxidation.

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patent: 2000-173925 (2000-06-01), None

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