Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Patent
1998-05-05
1999-11-30
Breneman, Bruce
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
216 2, C23F 102
Patent
active
059936797
ABSTRACT:
A method of cleaning metallic films built up within a thin film deposition apparatus is disclosed. The method includes an oxidation step to oxidize the metallic film and produce a film of the oxide thereof, a complexing step to complex the oxide film and produce a complex thereof, and a sublimation step to sublimate the complex. The conditions of these cleaning steps are set so that the oxidation step is the rate-determining step.
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Kobayashi Akiko
Koide Tomoaki
Okada Osamu
Sekiguchi Atsushi
Tae Ko Sang
Anelva Corporation
Breneman Bruce
Powell Alva C
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