Method of cleaning etching apparatus

Details Method of cleaning etching apparatus Method of cleaning etching apparatus

2005-08-15

2010-02-16

Deo, Duy-Vu N (Department: 1792)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S001100

Reexamination Certificate

active

07662235

ABSTRACT:
To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition.Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).

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