Method of cleaning deposition chamber

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

Reexamination Certificate

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C134S001100, C134S001200, C134S001300

Reexamination Certificate

active

07569111

ABSTRACT:
A process for cleaning a deposition chamber. The process includes feeding a fluorine-containing gas into the deposition chamber; maintaining the fluorine-containing gas in the deposition chamber at a first pressure; providing RF power to ignite plasma of the fluorine-containing gas within the deposition chamber; keeping the deposition chamber at a first temperature for a time period with the presence of the plasma; turning off the RF power to cease the plasma; and feeding a remote plasma containing free fluorine from a remote plasma source into the deposition chamber, without evacuating the deposition chamber, at the first temperature to clean interior surfaces of the deposition chamber.

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Fluorinated gases for semiconductor manufacture: process advances in chemical vapor deposition chamber cleaning, Charles C. Allgood, Journal of Fluorine Chemistry 122 (2003) 105-112, Jul. 1, 2003.

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