Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2006-04-19
2009-08-04
Deo, Duy-Vu N (Department: 1792)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S001100, C134S001200, C134S001300
Reexamination Certificate
active
07569111
ABSTRACT:
A process for cleaning a deposition chamber. The process includes feeding a fluorine-containing gas into the deposition chamber; maintaining the fluorine-containing gas in the deposition chamber at a first pressure; providing RF power to ignite plasma of the fluorine-containing gas within the deposition chamber; keeping the deposition chamber at a first temperature for a time period with the presence of the plasma; turning off the RF power to cease the plasma; and feeding a remote plasma containing free fluorine from a remote plasma source into the deposition chamber, without evacuating the deposition chamber, at the first temperature to clean interior surfaces of the deposition chamber.
REFERENCES:
patent: 5935340 (1999-08-01), Xia
patent: 6125859 (2000-10-01), Kao
patent: 6584987 (2003-07-01), Cheng et al.
patent: 2003/0029475 (2003-02-01), Hua
patent: 2003/0170402 (2003-09-01), Arai
patent: 2004/0000321 (2004-01-01), Cui et al.
patent: 2005/0108892 (2005-05-01), Wu et al.
patent: 2006/0032833 (2006-02-01), Kawaguchi et al.
patent: 2006/0040066 (2006-02-01), Tsutae
patent: 2006/0093756 (2006-05-01), Rajagopalan et al.
patent: 3-44469 (1991-02-01), None
patent: 2000-265275 (2000-09-01), None
patent: 481825 (2002-04-01), None
patent: 571364 (2004-01-01), None
Fluorinated gases for semiconductor manufacture: process advances in chemical vapor deposition chamber cleaning, Charles C. Allgood, Journal of Fluorine Chemistry 122 (2003) 105-112, Jul. 1, 2003.
Lai Chien-Hsin
Wang Chun-Yi
Deo Duy-Vu N
Hsu Winston
United Microelectronics Corp.
LandOfFree
Method of cleaning deposition chamber does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of cleaning deposition chamber, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of cleaning deposition chamber will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4120431