Method of cleaning carbon member contaminated with inorganic dep

Details Method of cleaning carbon member contaminated with inorganic dep Method of cleaning carbon member contaminated with inorganic dep

1990-07-05

1991-12-03

Morris, Theodore

Cleaning and liquid contact with solids

Processes

With treating fluid motion

134 21, 134 30, 156646, 423460, B08B 500

Patent

active

050697242

ABSTRACT:
Carbon members contaminated with deposits of metals and/or metal compounds such as nitrides or carbides are thoroughly cleaned with little adverse influences on the carbon members themselves by treating the contaminated carbon members with a cleaning gas consisting of 1-20 vol % of CIF.sub.3 gas and the balance of an inactive diluent gas at a temperature in the range from 200.degree. to 300.degree. C. For example, this cleaning method is applicable to graphite parts of apparatus for forming thin films in the manufacture of semiconductor devices.

REFERENCES:
J. G. Gualtieri, M. J. Katz, and G. A. Wolff, "Gas Etching and its Effect on Semiconductor Surfaces" (U.S. Army Signal Research and Develop-Lab), Chemical Abstract, vol. 54, No. 22, 1960, p. 23761.

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