Method of cleaning a surface of a semiconductor substrate by a h

Details Method of cleaning a surface of a semiconductor substrate by a h Method of cleaning a surface of a semiconductor substrate by a h

1997-02-28

1998-12-15

Warden, Robert

Cleaning and liquid contact with solids

Processes

Including work heating or contact with combustion products

134 2, 134 3, 134 21, 134902, 438770, 438906, B08B 704

Patent

active

058491023

ABSTRACT:
A method of cleaning a surface of a semiconductor comprising the steps of a) washing the semiconductor surface with chemicals to remove particles and metal impurities from the surface; b) inserting the semiconductor into a furnace that contains a gas mixture of nitrogen gas and a second inert gas; c) replacing the gas mixture with a third inert gas; d) heating the furnace containing the third inert gas for a predetermined period of time; and e) replacing the third inert gas in the furnace with oxygen and thermally oxidizing the surface of the semiconductor to form an oxide film on the surface.

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