Method of cleaning a surface of a compound semiconductor crystal

Details Method of cleaning a surface of a compound semiconductor crystal Method of cleaning a surface of a compound semiconductor crystal

1997-08-27

1999-12-14

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

H01L 21301

Patent

active

060017449

ABSTRACT:
A surface of a compound semiconductor crystal of Group II-VI elements of Periodic Table can be cleaned to obtain a mirror surface suitable for epitaxial growth, without deteriorating the smoothness of the surface after etching. The feature of a method of cleaning a surface of the compound semiconductor crystal consists in using an etching solution consisting of an aqueous solution of a mixture of sulfuric acid and water in a proportion by volume of 1 to 10 parts of sulfuric acid to 1 part of water, saturated with potassium dichromate, etching the compound semiconductor crystal of Group II-VI elements of Periodic Table with the etching solution at a temperature within a range of 10 to 80.degree. C., and if necessary, washing with water at a temperature of from 10.degree. C. to the boiling point, methanol or isopropyl alcohol, or subjecting to ultrasonic washing or boiling washing in dichloromethane, trichloroethylene or acetone.

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M.W. Cho et al., "Surface Treatment of ZnSe Substrate and Homoepitaxy of ZnSe", Journal of Electronic Materials, vol. 26, No. 5, pp. 423-428, 1997.

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