Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2011-06-21
2011-06-21
Culbert, Roberts (Department: 1716)
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
C216S109000, C134S003000
Reexamination Certificate
active
07964109
ABSTRACT:
The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-containing conductive line, and cobalt-containing film cleaning solutions. In one implementation, a method of cleaning a surface of a cobalt-containing material includes forming a cobalt-containing material over a substrate. The surface of the cobalt-containing material is exposed to an aqueous mixture. The aqueous mixture has an acidic pH and comprises acetic acid, a multiprotic acid, and HF. Other aspects and implementations are contemplated.
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Culbert Roberts
Micro)n Technology, Inc.
Wells St. John P.S.
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