Method of cleaning a semiconductor substrate

Details Method of cleaning a semiconductor substrate Method of cleaning a semiconductor substrate

2007-12-11

2007-12-11

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

C134S002000, C134S003000, C134S019000, C216S103000, C216S104000, C216S106000, C216S107000, C216S108000, C216S109000, C438S906000, C510S175000

Reexamination Certificate

active

10843444

ABSTRACT:
A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cleaning solution including hydrogen chloride and hydrogen peroxide (H2O2) to clean a semiconductor substrate without using an alkaline solution including ammonium hydroxide. Accordingly, a clean surface of a semiconductor substrate is provided in selective epitaxial growth (SEG) process to grow an epitaxial layer with smooth surface.

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