Method of cleaning a process tube

Details Method of cleaning a process tube Method of cleaning a process tube

1992-02-03

1993-10-19

Morris, Theodore

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 134 21, 134 2211, C03C 2300, B08B 700, B08B 902

Patent

active

052541762

ABSTRACT:
A method of cleaning the process tube of the CVD apparatus comprising carrying silicon wafers out of the process tube, making temperature in the process tube lower enough than the process temperature, that is, equal to or higher than room temperature, and supplying cleaning gas, in which ClF.sub.3 is contained, into the process tube to react with poly-silicon and amorphous silicon (Si) stuck to that portion of the inner wall of the process tube which is not in the uniformly-heated zone in the process tube, whereby the matters stuck can be removed from the inner wall of the process tube for a shorter time.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 5011705 (1991-04-01), Tanaka
Saito et al., "Plasmaless Cleaning Process of Silicon Surface Using Chlorine Trifluoride", Mar. 19, 1990, Applied Physics Letter, vol. 56, No. 12, pp. 1119-1121.
Ibbotson et al., "Selective Interhalogen Etching of Tantalum Compounds and Other Simiconductor Materials", Apr. 15, 1985, Applied Physics Letter, vol. 46, No. 8, pp. 794-796.
Ibbotson et al., "Plasmaless Dry Etching of Silicon with Fluorine-Containing Compounds", Nov. 15, 1984, Applied Physics Letter, vol. 56, No. 10, pp. 2939-2942.

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