Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Reexamination Certificate
2011-05-17
2011-05-17
Kornakov, Michael (Department: 1714)
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
C134S019000, C134S022100, C134S036000
Reexamination Certificate
active
07942974
ABSTRACT:
A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
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Machine Translation of JP 2002-100618 A by Ono et al., Japanese Patent Application Publication, Apr. 2002.
Computer Translation of JP 2003-178986 by Ono et al., published Jun. 27, 2003.
Kimura Takako
Sato Yuusuke
Shigemoto Takamitsu
Sonobe Jun
Tamaoki Naoki
Coleman Ryan
Kabushiki Kaisha Toshiba
Kornakov Michael
L'Air Liquide
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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