Method of chimical mechanical polishing for dielectric layers

Details Method of chimical mechanical polishing for dielectric layers Method of chimical mechanical polishing for dielectric layers

1994-04-25

1995-09-12

Rose, Robert A.

Abrading

Abrading process

Glass or stone abrading

451 31, 437225, 437974, B24B 722, H01L 2100

Patent

active

054493145

ABSTRACT:
A method of forming a planarized dielectric layer includes depositing a dielectric material on a substrate with a dopant concentration that decreases with depth and then chemically mechanically polishing the doped dielectric material. During the chemical mechanical polishing process the polish rate will be relatively fast initially but will slow down as the lighter doped material is contacted. Global planarity and polish selectivity are improved because the dopant gradient will automatically slow down the polish rate in areas where the lighter doped material is contacted. The high points of the dielectric material will thus polish faster than the low points. In an alternate embodiment of the invention, an underlying layer is deposited below a dopant graded dielectric layer having a predetermined dopant concentration that decreases with depth. The underlying layer may be undoped or uniformly doped. During the chemical mechanical planarization process, the dielectric layer with the graded profile is substantially removed. This insures that subsequent process steps will not be affected by a planarized dielectric layer having a non-uniform dopant concentration.

REFERENCES:
patent: 3841031 (1994-10-01), Walsh
patent: 4680893 (1987-07-01), Cronkhite et al.
patent: 5036015 (1991-07-01), Sandhu et al.
patent: 5137597 (1992-08-01), Curry II et al.
patent: 5142828 (1992-09-01), Curry, II
patent: 5169491 (1992-12-01), Doan
patent: 5230184 (1993-07-01), Bukhman
patent: 5312512 (1994-05-01), Allman et al.
patent: 5314843 (1994-05-01), Yu et al.
patent: 5332467 (1994-07-01), Sone et al.
patent: 5356513 (1994-10-01), Burke et al.
Patrick et al., "Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections," J. Electrochem Soc. vol. 138 No. 6, pp. 1778-1784, Jun. 1991.
Heyboer et al., "Chemomechanical Silicon Polish," J. Electochem. Soc., vol. 138 No. 3, pp. 774-777, Mar. 1991.
Surfacetech Review, Rodel Products Corp., Dec. 1986, vol. 1, Issue 1.
Yu et al., "Submicron Aluminum Plug Process Utilizing High Temperature Sputtering and Chemical Mechanical Polishing," Conference Proceedings ULSI-VII, Materials Research Society, pp. 519-524, 1992.
Wolf, "Silicon Processing For The VLSI ERA", vol. 2-Process Integration, Lattice Press, pp. 198-239.

Affiliated with

Also associated with

Rating

Method of chimical mechanical polishing for dielectric layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of chimical mechanical polishing for dielectric layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of chimical mechanical polishing for dielectric layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-402996