Method of chemically vapor depositing a thin film of GaAs

Details Method of chemically vapor depositing a thin film of GaAs Method of chemically vapor depositing a thin film of GaAs

1990-01-03

1991-08-06

Lusignan, Michael

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

4272552, 4272557, 156613, 156614, 437133, B05D 512, C23C 1646

Patent

active

050376748

ABSTRACT:
Doped thin films of GaAs are chemically vapor deposited by depositing a high resistant buffer layer of GaAs on a GaAs substrate by gaseous reaction of a mixture of arsine gas and trimethylgallium in the gas phase over the substrate while the temperature of the substrate is maintained within the range of 600.degree.-700.degree. C., stopping the supply of trimethylgallium to the gas mixture undergoing reaction and increasing the temperature of the substrate to within the range of 700.degree.-800.degree. C., and then resuming the supply of trimethylgallium to and supplying hydrogen sulfide to the gas phase over the substrate at the stated temperature, thereby depositing a doped GaAs layer over the buffer layer on the substrate having a distribution of carrier density of less than 5%.

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