Method of chemically mechanically polishing an electronic compon

Details Method of chemically mechanically polishing an electronic compon Method of chemically mechanically polishing an electronic compon

1995-11-07

1998-03-10

Nguyen, Nam

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438697, 438633, 252 791, H01L 21461

Patent

active

057260990

ABSTRACT:
A method of forming metal patterns in an insulating layer on a semiconductor wafer. After Chem-Mech Polishing (CMP) the insulating layer and forming studs in a planarized insulating layer, the polished surface is chem-mech polished with a touch-up slurry. The touch-up slurry has a nearly identical removal rate for the stud material (tungsten or titanium) as for the insulating material (SiO.sub.2). The preferred non-selective slurry is fumed colloidal silica, 8% by weight, and 20 g/l ammonium persulfate.

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