Method of chemical vapor deposition of copper, silver, and gold

Details Method of chemical vapor deposition of copper, silver, and gold Method of chemical vapor deposition of copper, silver, and gold

1989-09-29

1990-08-14

Childs, Sadie

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 531, 427140, 427252, 427253, 427255, 4273831, B05D 306

Patent

active

049486233

ABSTRACT:
Improved processes are described for the deposition of Cu and group IB metals such as Ag and Au. These processes include thermal CVD, photothermal depositions and photochemical deposition. The gaseous precursor which leads to successful deposition of high quality films at low temperatures includes a cyclopentadienyl ring, a two electron donor ligand, and the group IB metal in a +1 oxidation state. In addition, derivatives of the cyclopentadienyl ring can be used where the substituents on the ring include those selected from alkyl groups, halide groups, and psuedohalide groups. In addition, the two electron donor ligand can be selected from the group consisting of trivalent phosphines, amines and arsines. A representative precursor for the deposition of Cu is triethylphosphine cyclopentadienyl copper (I).

REFERENCES:
patent: 3018194 (1962-01-01), Norman et al.
patent: 3071493 (1963-01-01), Whaley et al.
patent: 3083550 (1963-04-01), Averbach
patent: 3188230 (1965-06-01), Bakish et al.
patent: 3375129 (1968-03-01), Carley et al.
patent: 4009297 (1977-02-01), Redmond et al.
patent: 4321073 (1982-03-01), Blair

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