Method of chemical mechanical polishing (CMP) using an underpad

Details Method of chemical mechanical polishing (CMP) using an underpad Method of chemical mechanical polishing (CMP) using an underpad

1997-07-03

1999-05-04

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 38, 216 88, 156345, H01L 2100

Patent

active

058997458

ABSTRACT:
A chemical mechanical polishing (CMP) method utilizes a polishing pad (21) and an under pad (20). The under pad (20) has an edge portion (24) and a central portion (22). The central portion (22) has either a shore D hardness less than a shore D hardness of the portion (24), greater slurry absorption than the edge portion (24), or more compressibility than the edge portion (24). This composite material under pad (20) will improve polishing uniformity of a semiconductor wafer (39). In addition, the use of the polishing pads (20 and 21) allows for greater final wafer profile control than was previously available in the art (FIGS. 4-6).

REFERENCES:
patent: 5435772 (1995-07-01), Yu

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