Method of characterizing bistable semiconductor lasers

Details Method of characterizing bistable semiconductor lasers Method of characterizing bistable semiconductor lasers

1989-04-13

1991-04-16

Evans, F. L.

Optics: measuring and testing

Refraction testing

372 8, G01N 2141, H01S 330

Patent

active

050077350

ABSTRACT:
The characteristic parameters of a semiconductor laser (1) acting as an amplifier and brought to bistable operating conditions are determined. The output power (I2) of laser (1) is measured as a function of the power (I1) of an amplitude-modulated optical input signal to determine the laser hysteresis loop; the switching points (P1, P2) between the two stable states of the laser (1) are identified, the input and output power values relevant to such points are memorized, and at least the value of the non-linear refractive index coefficient (n.sub.2) of the material used to fabricate the laser (1) as determined starting from the power values relevant to at least one of said points (P1, P2). By exploiting the power values relevant to both switching points (P1, P2) also the amplification factor (A), the finesse parameter (F) of the passive cavity of the laser (1) and the wavelength difference (.lambda.1-.lambda.2) between the laser under test (1) and a second laser (3) generating the optical signal causing the laser under test (1) to operate under bistable conditions are measured.

REFERENCES:
patent: 4873690 (1989-10-01), Adams
patent: 4879761 (1989-11-01), Webb
D. Milam and M. J. Weber, "Measurement of Nonlinear Refractive-Index Coefficients Using Time-Resolved Interferometry: Application . . . ", Journal of Applied Physics, vol. 47, No. 6, Jun. 1976 (pp. 2497-2501).

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